Direct simulation Monte Carlo method of deposition processes

Direct simulation Monte Carlo method of deposition processes

Modifications had been done on the basic DSMC2.fortran program developed by G. A. Bird to approximate the initial deposition profile characteristic of a physical vapor deposition process, whereby little or no surface chemical reaction occurs. In this report, initial deposition growth of PVD Aluminum...

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Bibliographic Details
Main Author: Tan, Chee Hong.
Other Authors: Zhao, Yong
Format: Thesis
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Computer science and engineering::Computing methodologies::Simulation and modeling
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/13523
Description
Summary:Modifications had been done on the basic DSMC2.fortran program developed by G. A. Bird to approximate the initial deposition profile characteristic of a physical vapor deposition process, whereby little or no surface chemical reaction occurs. In this report, initial deposition growth of PVD Aluminum is studied using the number flux distribution along the surface of a 0.6um x 0.6um trench found commonly in a semiconductor device. Existing technical literatures and publications will be used to confirm the validity of the experimental results.

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