Direct simulation Monte Carlo method of deposition processes
Modifications had been done on the basic DSMC2.fortran program developed by G. A. Bird to approximate the initial deposition profile characteristic of a physical vapor deposition process, whereby little or no surface chemical reaction occurs. In this report, initial deposition growth of PVD Aluminum...
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
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2008
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| Online Access: | http://hdl.handle.net/10356/13523 |
| _version_ | 1811688966505627648 |
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| author | Tan, Chee Hong. |
| author2 | Zhao, Yong |
| author_facet | Zhao, Yong Tan, Chee Hong. |
| author_sort | Tan, Chee Hong. |
| collection | NTU |
| description | Modifications had been done on the basic DSMC2.fortran program developed by G. A. Bird to approximate the initial deposition profile characteristic of a physical vapor deposition process, whereby little or no surface chemical reaction occurs. In this report, initial deposition growth of PVD Aluminum is studied using the number flux distribution along the surface of a 0.6um x 0.6um trench found commonly in a semiconductor device. Existing technical literatures and publications will be used to confirm the validity of the experimental results. |
| first_indexed | 2024-10-01T05:40:36Z |
| format | Thesis |
| id | ntu-10356/13523 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:40:36Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/135232023-03-11T17:25:02Z Direct simulation Monte Carlo method of deposition processes Tan, Chee Hong. Zhao, Yong School of Mechanical and Production Engineering DRNTU::Engineering::Computer science and engineering::Computing methodologies::Simulation and modeling DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Modifications had been done on the basic DSMC2.fortran program developed by G. A. Bird to approximate the initial deposition profile characteristic of a physical vapor deposition process, whereby little or no surface chemical reaction occurs. In this report, initial deposition growth of PVD Aluminum is studied using the number flux distribution along the surface of a 0.6um x 0.6um trench found commonly in a semiconductor device. Existing technical literatures and publications will be used to confirm the validity of the experimental results. Master of Science (Precision Engineering) 2008-08-06T04:22:28Z 2008-10-20T08:22:39Z 2008-08-06T04:22:28Z 2008-10-20T08:22:39Z 1999 1999 Thesis http://hdl.handle.net/10356/13523 en 71 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Computer science and engineering::Computing methodologies::Simulation and modeling DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Tan, Chee Hong. Direct simulation Monte Carlo method of deposition processes |
| title | Direct simulation Monte Carlo method of deposition processes |
| title_full | Direct simulation Monte Carlo method of deposition processes |
| title_fullStr | Direct simulation Monte Carlo method of deposition processes |
| title_full_unstemmed | Direct simulation Monte Carlo method of deposition processes |
| title_short | Direct simulation Monte Carlo method of deposition processes |
| title_sort | direct simulation monte carlo method of deposition processes |
| topic | DRNTU::Engineering::Computer science and engineering::Computing methodologies::Simulation and modeling DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | http://hdl.handle.net/10356/13523 |
| work_keys_str_mv | AT tancheehong directsimulationmontecarlomethodofdepositionprocesses |