Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation

Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation

Spiral growth of various nanomaterials including some two-dimensional (2D) transition metal dichalcogenides had recently been experimentally realized using chemical vapor deposition (CVD). However, such growth that is driven by screw dislocation remained elusive for graphene and is rarely discussed...

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Bibliographic Details
Main Authors: Tay, Roland Yingjie, Park, Hyo Ju, Lin, Jinjun, Ng, Zhi Kia, Jing, Lin, Li, Hongling, Zhu, Minmin, Tsang, Siu Hon, Lee, Zonghoon, Teo, Edwin Hang Tong
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
Crystallization
Layers
Online Access:https://hdl.handle.net/10356/137196

Internet

https://hdl.handle.net/10356/137196

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