Studies of GaN-on-GaN vertical Schottky diodes for radiation sensing applications
Gallium Nitride (GaN) with its large bandgap, high electron saturation velocity, and critical electric field has been widely applied in the fabrication of illumination, high frequency, and high-power devices. Recently, researchers are exploring radiation sensing as a probable application for GaN dev...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/137398 |