Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode
In this work, we study the dark current characteristics in middle-wavelength infrared photodiodes with a heterojunction n-i-p architecture. The photodiode includes wide bandgap and quaternary layers to reduce the bulk dark current. Photodiodes with square mesa size varying from 500-20 μm are fabrica...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/137634 |