Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode
In this work, we study the dark current characteristics in middle-wavelength infrared photodiodes with a heterojunction n-i-p architecture. The photodiode includes wide bandgap and quaternary layers to reduce the bulk dark current. Photodiodes with square mesa size varying from 500-20 μm are fabrica...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Online Access: | https://hdl.handle.net/10356/137634 |
| _version_ | 1826122841222807552 |
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| author | Suo, Fei Tong, Jinchao Qian, Li Zhang, Dao Hua |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Suo, Fei Tong, Jinchao Qian, Li Zhang, Dao Hua |
| author_sort | Suo, Fei |
| collection | NTU |
| description | In this work, we study the dark current characteristics in middle-wavelength infrared photodiodes with a heterojunction n-i-p architecture. The photodiode includes wide bandgap and quaternary layers to reduce the bulk dark current. Photodiodes with square mesa size varying from 500-20 μm are fabricated and their dark currents are characterized at temperatures from 77 K to room temperature (293 K). Surface leakage current is found to be negligible under normal operational conditions. Based on the study of activation energy, when the magnitude of reverse bias is smaller than 0.1 V and the temperature is larger than 255 K, the bulk dark current is found to be dominated mainly by the diffusion process. The contribution from the Shockley-Read-Hall and tunneling process will become significant when the temperature is below 255 K or the magnitude of reverse voltage bias is larger than 0.1 V. At -0.1 V bias, the observed dark current density is as small as 0.605 A • cm-2 at room temperature, and decreases to 6.6 × 10-2 A • cm-2 at 255 K and 1.16 × 10-3 A • cm-2 at 185 K for a typical square mesa diode with a size of 50 μm. Room-temperature performance of the photodiode demonstrates a cutoff wavelength of 5 μm and a blackbody detectivity of 1.5 × 109 cm • Hz1/2 W-1. |
| first_indexed | 2024-10-01T05:54:46Z |
| format | Journal Article |
| id | ntu-10356/137634 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:54:46Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1376342020-04-07T04:17:59Z Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode Suo, Fei Tong, Jinchao Qian, Li Zhang, Dao Hua School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Dark Current Activation Energy In this work, we study the dark current characteristics in middle-wavelength infrared photodiodes with a heterojunction n-i-p architecture. The photodiode includes wide bandgap and quaternary layers to reduce the bulk dark current. Photodiodes with square mesa size varying from 500-20 μm are fabricated and their dark currents are characterized at temperatures from 77 K to room temperature (293 K). Surface leakage current is found to be negligible under normal operational conditions. Based on the study of activation energy, when the magnitude of reverse bias is smaller than 0.1 V and the temperature is larger than 255 K, the bulk dark current is found to be dominated mainly by the diffusion process. The contribution from the Shockley-Read-Hall and tunneling process will become significant when the temperature is below 255 K or the magnitude of reverse voltage bias is larger than 0.1 V. At -0.1 V bias, the observed dark current density is as small as 0.605 A • cm-2 at room temperature, and decreases to 6.6 × 10-2 A • cm-2 at 255 K and 1.16 × 10-3 A • cm-2 at 185 K for a typical square mesa diode with a size of 50 μm. Room-temperature performance of the photodiode demonstrates a cutoff wavelength of 5 μm and a blackbody detectivity of 1.5 × 109 cm • Hz1/2 W-1. ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) EDB (Economic Devt. Board, S’pore) 2020-04-07T04:17:59Z 2020-04-07T04:17:59Z 2018 Journal Article Suo, F., Tong, J., Qian, L., & Zhang, D. H. (2018). Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode. Journal of Physics D: Applied Physics, 51(27), 275102-. doi:10.1088/1361-6463/aac8d0 0022-3727 https://hdl.handle.net/10356/137634 10.1088/1361-6463/aac8d0 2-s2.0-85049318061 27 51 en Journal of Physics D: Applied Physics © 2018 IOP Publishing Ltd. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Dark Current Activation Energy Suo, Fei Tong, Jinchao Qian, Li Zhang, Dao Hua Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode |
| title | Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode |
| title_full | Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode |
| title_fullStr | Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode |
| title_full_unstemmed | Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode |
| title_short | Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode |
| title_sort | study of dark current in mid infrared inassb based hetero n i p photodiode |
| topic | Engineering::Electrical and electronic engineering Dark Current Activation Energy |
| url | https://hdl.handle.net/10356/137634 |
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