Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond
GaN-based high-electron-mobility Transistors (HEMTs) are widely used for high frequency, high voltage and high-power applications. However, there are still many major challenges facing these devices such as thermal management, size reduction and long-term reliable operation, especially when they are...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/137690 |