Field-driven athermal activation of amorphous metal oxide semiconductors for flexible programmable logic circuits and neuromorphic electronics

Field-driven athermal activation of amorphous metal oxide semiconductors for flexible programmable logic circuits and neuromorphic electronics

Despite extensive research, large-scale realization of metal-oxide electronics is still impeded by high-temperature fabrication, incompatible with flexible substrates. Ideally, an athermal treatment modifying the electronic structure of amorphous metal oxide semiconductors (AMOS) to generate suffici...

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Bibliographic Details
Main Authors: Kulkarni, Mohit Rameshchandra, John, Rohit Abraham, Tiwari, Nidhi, Nirmal, Amoolya, Ng, Si En, Nguyen, Anh Chien, Mathews, Nripan
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering::Semiconductors
Engineering::Materials::Microelectronics and semiconductor materials
Field-driven Athermal Activation
Amorphous Metal Oxides
Online Access:https://hdl.handle.net/10356/138083

Internet

https://hdl.handle.net/10356/138083

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