Printed high mobility AMOS thin film transistors
The report is done to investigate the effects the addition of gallium to the IZO thin film transistor and hydrogen peroxide to the IGZO solution processed thin film transistor. One major issue of the IZO Thin film transistor is with the instability of the device caused by the formation of vacancy de...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/138632 |