Self-gating in semiconductor electrocatalysis

Self-gating in semiconductor electrocatalysis

The semiconductor-electrolyte interface dominates the behaviours of semiconductor electrocatalysis, which has been modelled as a Schottky-analogue junction according to classical electron transfer theories. However, this model cannot be used to explain the extremely high carrier accumulations in ult...

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Bibliographic Details
Main Authors: He, Yongmin, He, Qiyuan, Wang, Luqing, Zhu, Chao, Golani, Prafful, Handoko, Albertus D, Yu, Xuechao, Gao, Caitian, Ding, Mengning, Wang, Xuewen, Liu, Fucai, Zeng, Qingsheng, Yu, Peng, Guo, Shasha, Yakobson, Boris I, Wang, Liang, Seh, Zhi Wei, Zhang, Zhuhua, Wu, Minghong, Wang, Qi Jie, Zhang, Hua, Liu, Zheng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
Electrocatalysis
Semiconductor Catalysts
Online Access:https://hdl.handle.net/10356/138700

Internet

https://hdl.handle.net/10356/138700

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