Monolayer molybdenum disulfide transistors with single-atom-thick gates

Monolayer molybdenum disulfide transistors with single-atom-thick gates

Two-dimensional transition-metal dichalcogenides (TMDs) are unique candidates for the development of next-generation electronic devices. However, the large contact resistance between metal and the monolayer TMDs have significantly limited the devices' performance. Also, the integration of ultra...

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Bibliographic Details
Main Authors: Zhu, Yibo, Li, Yijun, Arefe, Ghidewon, Burke, Robert A., Tan, Cheng, Hao, Yufeng, Liu, Xiaochi, Liu, Xue, Yoo, Won Jong, Dubey, Madan, Lin, Qiao, Hone, James C.
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2020
Subjects:
Science::Physics
Molybdenum Disulfide
Graphene Gate
Online Access:https://hdl.handle.net/10356/139048

Internet

https://hdl.handle.net/10356/139048

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