Structural and surface characterization of wide band gap semiconductors for high-speed transistor applications
This report presents the research and characterization work during the final year project. The project focuses on the structural and electrical characterization of AlN/GaN/AlN (AGA) double-heterojunction high electron mobility (HEMT) heterostructures on SiC substrates, and simulation of AGA HEMTs as...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/139404 |