Structural and surface characterization of wide band gap semiconductors for high-speed transistor applications

This report presents the research and characterization work during the final year project. The project focuses on the structural and electrical characterization of AlN/GaN/AlN (AGA) double-heterojunction high electron mobility (HEMT) heterostructures on SiC substrates, and simulation of AGA HEMTs as...

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Bibliographic Details
Main Author: Chen, Kai
Other Authors: Radhakrishnan K
Format: Final Year Project (FYP)
Language:English
Published: Nanyang Technological University 2020
Subjects:
Online Access:https://hdl.handle.net/10356/139404