Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
This research presents the characterization of interface traps of GaN High-ElectronMobility Transistors (HEMT). GaN HEMT devices have shown excellent performance in many area of applications such as high power, high frequency, communication and space application. Though it is attractive for future a...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
Nanyang Technological University
2020
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/139673 |