Dynamic ON resistance study in GaN HEMT for high power switching application
Gallium Nitride based HEMT devices are very popularly used in high power switching applications, high frequency and high voltage applications. These devices have popular applications in radar technology, military and defense-based applications, cellular and wireless communication. Their ability to m...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
Nanyang Technological University
2020
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/139893 |