Resistive switching devices based on halide perovskites
Resistance switching is a relatively new phenomenon that has been incorporated into fabricating non-volatile memory. Resistive random-access memory was the proposed future developments that utilize the resistance switching characteristic to replace flash memory. Thus, multiple researches were invest...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/140178 |