Studies on GaN-based semiconductor low cost ammonia gas sensors
Gas sensing devices have been in increasing focus across industries and research in the past few decades. This project is intent on studying Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) for gas sensing applications, together with the properties of Two Dimensional Electron G...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/140246 |