Studies on GaN-based semiconductor low cost ammonia gas sensors
Gas sensing devices have been in increasing focus across industries and research in the past few decades. This project is intent on studying Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) for gas sensing applications, together with the properties of Two Dimensional Electron G...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/140246 |
| _version_ | 1811681167966994432 |
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| author | Irfan Haziq Abdul Gani |
| author2 | Radhakrishnan K |
| author_facet | Radhakrishnan K Irfan Haziq Abdul Gani |
| author_sort | Irfan Haziq Abdul Gani |
| collection | NTU |
| description | Gas sensing devices have been in increasing focus across industries and research in the past few decades. This project is intent on studying Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) for gas sensing applications, together with the properties of Two Dimensional Electron Gas (2DEG) in the HEMT operating principle and Platinum (Pt) material to functionalise the surface for Ammonia (NH3) sensing applications. Following these studies, the effect of Pt functionalisation layer thickness in AlGaN/GaN HEMT sensors on pore size is further analysed. NH3 gas sensing measurements of AlGaN/GaN HEMT based sensor devices were also conducted to observe and analyse the response and sensitivity of devices with respect to variations in concentration and temperature. Image processing was carried out on SEM images of Pt surface topology to ascertain pore size on 10 nm, 15 nm and 20 nm Pt layer thickness. Image processing was conducted with Image J software where pore areas were segmented, counted and calculated. In sensing experiments, sample devices were exposed to NH3 gas at room temperature and high temperature settings.10 nm Pt layer thickness was found to have the largest average pore size and total pore area for target gas adsorption. In sensing experiments, the device resistance increased with increasing concentrations of NH3 at room temperature. The opposite trend is observed at 275℃. The highest change of resistance is observed at 275℃ as well. It is also concluded that the sensitivity of device sensing NH3 is temperature dependent. |
| first_indexed | 2024-10-01T03:36:39Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/140246 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:36:39Z |
| publishDate | 2020 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1402462023-07-07T18:40:09Z Studies on GaN-based semiconductor low cost ammonia gas sensors Irfan Haziq Abdul Gani Radhakrishnan K School of Electrical and Electronic Engineering ERADHA@ntu.edu.sg Engineering::Electrical and electronic engineering Gas sensing devices have been in increasing focus across industries and research in the past few decades. This project is intent on studying Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) for gas sensing applications, together with the properties of Two Dimensional Electron Gas (2DEG) in the HEMT operating principle and Platinum (Pt) material to functionalise the surface for Ammonia (NH3) sensing applications. Following these studies, the effect of Pt functionalisation layer thickness in AlGaN/GaN HEMT sensors on pore size is further analysed. NH3 gas sensing measurements of AlGaN/GaN HEMT based sensor devices were also conducted to observe and analyse the response and sensitivity of devices with respect to variations in concentration and temperature. Image processing was carried out on SEM images of Pt surface topology to ascertain pore size on 10 nm, 15 nm and 20 nm Pt layer thickness. Image processing was conducted with Image J software where pore areas were segmented, counted and calculated. In sensing experiments, sample devices were exposed to NH3 gas at room temperature and high temperature settings.10 nm Pt layer thickness was found to have the largest average pore size and total pore area for target gas adsorption. In sensing experiments, the device resistance increased with increasing concentrations of NH3 at room temperature. The opposite trend is observed at 275℃. The highest change of resistance is observed at 275℃ as well. It is also concluded that the sensitivity of device sensing NH3 is temperature dependent. Bachelor of Engineering (Electrical and Electronic Engineering) 2020-05-27T08:40:05Z 2020-05-27T08:40:05Z 2020 Final Year Project (FYP) https://hdl.handle.net/10356/140246 en A2092-191 application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering Irfan Haziq Abdul Gani Studies on GaN-based semiconductor low cost ammonia gas sensors |
| title | Studies on GaN-based semiconductor low cost ammonia gas sensors |
| title_full | Studies on GaN-based semiconductor low cost ammonia gas sensors |
| title_fullStr | Studies on GaN-based semiconductor low cost ammonia gas sensors |
| title_full_unstemmed | Studies on GaN-based semiconductor low cost ammonia gas sensors |
| title_short | Studies on GaN-based semiconductor low cost ammonia gas sensors |
| title_sort | studies on gan based semiconductor low cost ammonia gas sensors |
| topic | Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/140246 |
| work_keys_str_mv | AT irfanhaziqabdulgani studiesonganbasedsemiconductorlowcostammoniagassensors |