Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer

Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer

High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge tra...

Cijeli opis

Bibliografski detalji
Glavni autori: Kumari, Priyanka, Ko, Jieun, Rao, V. Ramgopal, Mhaisalkar, Subodh, Leong, Wei Lin
Daljnji autori: School of Electrical and Electronic Engineering
Format: Journal Article
Jezik:English
Izdano: 2020
Teme:
Engineering::Electrical and electronic engineering
Black Phosphorus
Quantum Dots
Online pristup:https://hdl.handle.net/10356/140331

Internet

https://hdl.handle.net/10356/140331

Slični predmeti