Gate-tunable resonant Raman spectroscopy of bilayer MoS2

Gate-tunable resonant Raman spectroscopy of bilayer MoS2

The gate‐tunable phonon properties in bilayer MoS2 are shown to be dependent on excitation energy. Raman intensity, Raman shift, and linewidth are affected by resonant excitation, while a nonresonant laser does not influence the intensity significantly. The gate‐dependent Raman shift of A1g mode (ei...

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Bibliographic Details
Main Authors: Lu, Xin, Muhammad Iqbal Bakti Utama, Wang, Xingzhi, Xu, Weigao, Zhao, Weijie, Owen, Samuel Man Hon, Xiong, Qihua
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Science::Physics
Electron Doping
Gate‐tunable
Online Access:https://hdl.handle.net/10356/140460

Internet

https://hdl.handle.net/10356/140460

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