Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for drain current make the model suitable to be embedded in circuit simulation and de...

Full description

Bibliographic Details
Main Authors: Qian, Haisheng, Hu, Guangxi, Hu, Laigui, Zhou, Xing, Liu, Ran, Zheng, Lirong
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
Logic Gates
Aluminum Gallium Nitride
Online Access:https://hdl.handle.net/10356/140470

Internet

https://hdl.handle.net/10356/140470

Similar Items