Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for drain current make the model suitable to be embedded in circuit simulation and de...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
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2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/140470 |
| _version_ | 1824455360243564544 |
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| author | Qian, Haisheng Hu, Guangxi Hu, Laigui Zhou, Xing Liu, Ran Zheng, Lirong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Qian, Haisheng Hu, Guangxi Hu, Laigui Zhou, Xing Liu, Ran Zheng, Lirong |
| author_sort | Qian, Haisheng |
| collection | NTU |
| description | Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for drain current make the model suitable to be embedded in circuit simulation and design tools. |
| first_indexed | 2025-02-19T03:36:58Z |
| format | Conference Paper |
| id | ntu-10356/140470 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:36:58Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1404702020-05-29T06:59:16Z Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices Qian, Haisheng Hu, Guangxi Hu, Laigui Zhou, Xing Liu, Ran Zheng, Lirong School of Electrical and Electronic Engineering 2017 IEEE 12th International Conference on ASIC (ASICON) Engineering::Electrical and electronic engineering Logic Gates Aluminum Gallium Nitride Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for drain current make the model suitable to be embedded in circuit simulation and design tools. 2020-05-29T06:59:16Z 2020-05-29T06:59:16Z 2018 Conference Paper Qian, H., Hu, G., Hu, L., Zhou, X., Liu, R., & Zheng, L. (2018). Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices. Proceedings of 2017 IEEE 12th International Conference on ASIC (ASICON), 249-251. doi:10.1109/ASICON.2017.8252459 978-1-5090-6626-1 https://hdl.handle.net/10356/140470 10.1109/ASICON.2017.8252459 2-s2.0-85044790824 249 251 en © 2017 IEEE. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Logic Gates Aluminum Gallium Nitride Qian, Haisheng Hu, Guangxi Hu, Laigui Zhou, Xing Liu, Ran Zheng, Lirong Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices |
| title | Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices |
| title_full | Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices |
| title_fullStr | Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices |
| title_full_unstemmed | Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices |
| title_short | Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices |
| title_sort | analytical models for channel potential and drain current in algan gan hemt devices |
| topic | Engineering::Electrical and electronic engineering Logic Gates Aluminum Gallium Nitride |
| url | https://hdl.handle.net/10356/140470 |
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