The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

A direct band gap type-I Ge0.75Sn0.25/Ge0.682Sn0.158Si0.16 QD heterostructure is proposed for mid-IR light sources. The effects of strain and composition are theoretically investigated to optimize the band offset of the direct band gap GeSn QDs. It is found that the introduction of tensile strain an...

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Bibliographic Details
Main Authors: Chen, Qimiao, Zhang, Lin, Zhou, Hao, Li, Wei, Son, Bong Kwon, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering::Semiconductors
Mid-IR Light Source
GeSn Quantum Dot
Online Access:https://hdl.handle.net/10356/141356

Internet

https://hdl.handle.net/10356/141356

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