The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

A direct band gap type-I Ge0.75Sn0.25/Ge0.682Sn0.158Si0.16 QD heterostructure is proposed for mid-IR light sources. The effects of strain and composition are theoretically investigated to optimize the band offset of the direct band gap GeSn QDs. It is found that the introduction of tensile strain an...

Descripció completa

Dades bibliogràfiques
Autors principals: Chen, Qimiao, Zhang, Lin, Zhou, Hao, Li, Wei, Son, Bong Kwon, Tan, Chuan Seng
Altres autors: School of Electrical and Electronic Engineering
Format: Journal Article
Idioma:English
Publicat: 2020
Matèries:
Engineering::Electrical and electronic engineering::Semiconductors
Mid-IR Light Source
GeSn Quantum Dot
Accés en línia:https://hdl.handle.net/10356/141356

Internet

https://hdl.handle.net/10356/141356

Ítems similars