RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI

RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI

Results specific to power amplifiers (PAs) designed using a SOI EDNMOS transistor free of kinks in ID-VD plane and high breakdown voltage are presented. The suppression of the drain current kink and improvement in breakdown voltage are achieved by the omission of the N+ source implant step. Instead,...

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Bibliographic Details
Main Authors: Toh, Rui Tze, Ang, Diing Shenp, Parthasarathy, Shyam, Wong, Jen Shuang, Yap, Hin Kiong, Zhang, Shaoqiang
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
EDMOS
Kink Effect
Online Access:https://hdl.handle.net/10356/141467

Internet

https://hdl.handle.net/10356/141467

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