Dielectric failure mechanisms in advanced Cu/low-k interconnect architecture
Time-dependent dielectric breakdown (TDDB) reliability is increasingly becoming a critical reliability concern with the introduction of lower dielectric constant materials and shrinking of metal spacing in the back-end-of-line technology. Therefore, there is a need to investigate the factors causing...
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| Format: | Thesis |
| Language: | English |
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2008
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| Online Access: | https://hdl.handle.net/10356/14244 |