Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications

Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications

Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present design, growth, and characterization of GeSn MSM PDs that are suitable for photo...

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Bibliographic Details
Main Authors: Ghosh, Soumava, Lin, Kuan-Chih, Tsai, Cheng-Hsun, Kumar, Harshvardhan, Chen, Qimiao, Zhang, Lin, Son, Bongkwon, Tan, Chuan Seng, Kim, Munho, Mukhopadhyay, Bratati, Chang, Guo-En
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering::Semiconductors
Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Germanium
Photodetector
Online Access:https://hdl.handle.net/10356/143428

Internet

https://hdl.handle.net/10356/143428

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