Band structure of strained Ge 1− x Sn x alloy : a full-zone 30-band k · p model

Band structure of strained Ge 1− x Sn x alloy : a full-zone 30-band k · p model

We extend the previous 30-band k· p model effectively employed for relaxed Ge1−xSnx alloy to the case of strained Ge1−xSnx alloy. The strain-relevant parameters for the 30-band k· p model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from liter...

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Bibliographic Details
Main Authors: Song, Zhigang, Fan, Weijun, Tan, Chuan Seng, Wang, Qijie, Nam, Donguk, Zhang, Dao Hua, Sun, Greg
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Materials
Ge
GeSn Alloy
Online Access:https://hdl.handle.net/10356/143734

Internet

https://hdl.handle.net/10356/143734

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