Band structure of strained Ge 1− x Sn x alloy : a full-zone 30-band k · p model
We extend the previous 30-band k· p model effectively employed for relaxed Ge1−xSnx alloy to the case of strained Ge1−xSnx alloy. The strain-relevant parameters for the 30-band k· p model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from liter...
Main Authors: | Song, Zhigang, Fan, Weijun, Tan, Chuan Seng, Wang, Qijie, Nam, Donguk, Zhang, Dao Hua, Sun, Greg |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/143734 |
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