Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

Amorphous oxide semiconductors have drawn considerable attention as a replacement for ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and transparency, amorphous metal oxide semiconductor (AOS) thin film transistors (TFTs) are being explored in emerging fle...

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Bibliographic Details
Main Authors: Tiwari, Nidhi, Nirmal, Amoolya, Kulkarni, Mohit Rameshchandra, John, Rohit Abraham, Mathews, Nripan
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Materials
Low Temperature TFTs
Flexible Electronics
Online Access:https://hdl.handle.net/10356/143736

Internet

https://hdl.handle.net/10356/143736

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