Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway
Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for information storage, simultaneous implementation of resistive switching and rectification effects, and a better understanding of switching mechanism are still...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/143922 |