Leakage current conduction mechanism in 3D capacitor embedded in Through-Silicon Via (TSV)
In this paper, we investigated leakage current conduction mechanism in 3D capacitors embedded in TSVs. Two sets of test vehicles, 400 nm sputtered TiN/30 nm ALD Al2O3/400 nm sputtered TiN and 50 nm ALD TiN/10 nm ALD Al2O3/50 nm ALD TiN, have been characterized for their leakage current, respectivel...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/144085 |