A 40 GHz on-chip power combine load for mm-wave power amplifier
Millimeter‐wave (Mm‐Wave) communication have been considered as one of the most potential candidate of the 5th generation communication (5G). However, the low breakdown voltage of CMOS challenges RF circuits design in various aspects especially for power amplifier (PA). The maximum available power f...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/144858 |