MOSFET small-signal model considering hot-carrier effect for millimeter-wave frequencies

MOSFET small-signal model considering hot-carrier effect for millimeter-wave frequencies

The hot-carrier effect, which is caused by the generation of interface states, is the main degradation mechanism for MOSFETs. Predicting the degradation of circuit performance due to the hot-carrier effect is important for practical circuit design. In this paper, we propose a small-signal model cons...

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Bibliographic Details
Main Authors: Li, Chenyang, Chye, Boon Chirn, Yang, Yongkui, Yao, Enyi, Fujishima, Minoru
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
Hot-carrier Degradation
Millimeter-wave
Online Access:https://hdl.handle.net/10356/144964

Internet

https://hdl.handle.net/10356/144964

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