MOSFET small-signal model considering hot-carrier effect for millimeter-wave frequencies
The hot-carrier effect, which is caused by the generation of interface states, is the main degradation mechanism for MOSFETs. Predicting the degradation of circuit performance due to the hot-carrier effect is important for practical circuit design. In this paper, we propose a small-signal model cons...
| Main Authors: | , , , , |
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| Andre forfattere: | |
| Format: | Journal Article |
| Sprog: | English |
| Udgivet: |
2020
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| Fag: | |
| Online adgang: | https://hdl.handle.net/10356/144964 |