Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors

Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...

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Bibliographic Details
Main Authors: Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ing, Ng Geok, Nitta, Shugo, Kennedy, John, Amano, Hiroshi
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
GaN-on-GaN
Schottky Barrier Diodes
Online Access:https://hdl.handle.net/10356/145190

Internet

https://hdl.handle.net/10356/145190

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