Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2020
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| Online Access: | https://hdl.handle.net/10356/145190 |
| _version_ | 1826122014496129024 |
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| author | Sandupatla, Abhinay Arulkumaran, Subramaniam Ing, Ng Geok Nitta, Shugo Kennedy, John Amano, Hiroshi |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Sandupatla, Abhinay Arulkumaran, Subramaniam Ing, Ng Geok Nitta, Shugo Kennedy, John Amano, Hiroshi |
| author_sort | Sandupatla, Abhinay |
| collection | NTU |
| description | Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of -2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (-20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at -750 V. |
| first_indexed | 2024-10-01T05:41:35Z |
| format | Journal Article |
| id | ntu-10356/145190 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:41:35Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1451902020-12-15T02:26:11Z Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors Sandupatla, Abhinay Arulkumaran, Subramaniam Ing, Ng Geok Nitta, Shugo Kennedy, John Amano, Hiroshi School of Electrical and Electronic Engineering Temasek Laboratories @ NTU Engineering::Electrical and electronic engineering GaN-on-GaN Schottky Barrier Diodes Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of -2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (-20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at -750 V. Published version 2020-12-15T02:26:10Z 2020-12-15T02:26:10Z 2020 Journal Article Sandupatla, A., Arulkumaran, S., Ing, N. G., Nitta, S., Kennedy, J., & Amano, H. (2020). Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors. Micromachines, 11(5), 519-. doi:10.3390/mi11050519 2072-666X https://hdl.handle.net/10356/145190 10.3390/mi11050519 32443764 5 11 en Micromachines © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering GaN-on-GaN Schottky Barrier Diodes Sandupatla, Abhinay Arulkumaran, Subramaniam Ing, Ng Geok Nitta, Shugo Kennedy, John Amano, Hiroshi Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors |
| title | Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors |
| title_full | Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors |
| title_fullStr | Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors |
| title_full_unstemmed | Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors |
| title_short | Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors |
| title_sort | vertical gan on gan schottky diodes as α particle radiation sensors |
| topic | Engineering::Electrical and electronic engineering GaN-on-GaN Schottky Barrier Diodes |
| url | https://hdl.handle.net/10356/145190 |
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