3D geometric engineering of the double wedge-like electrodes for filament-type RRAM device performance improvement
The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices. In this work, a 3D electrode structure engineering method is proposed. The geometric parameters defined as electro...
| Váldodahkkit: | , , , , , , , |
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| Eará dahkkit: | |
| Materiálatiipa: | Journal Article |
| Giella: | English |
| Almmustuhtton: |
2021
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| Fáttát: | |
| Liŋkkat: | https://hdl.handle.net/10356/145876 |