Sub-mA/cm² dark current density, buffer-less Germanium (Ge) photodiodes on a 200-mm Ge-on-insulator substrate

Sub-mA/cm² dark current density, buffer-less Germanium (Ge) photodiodes on a 200-mm Ge-on-insulator substrate

In recent years, Germanium (Ge) photodiodes have established a widespread utilization in photonic-integrated circuits (PICs). However, the devices commonly exhibit a prominent dark current due to the substantial defects at the Ge/Si heteroepitaxial interface. Herein, we demonstrate normal-incidence,...

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Bibliographic Details
Main Authors: Lin, Yiding, Son, Bongkwon, Lee, Kwang Hong, Michel, Jurgen, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering::Semiconductors
Germanium (Ge)
Ge-on-insulator
Online Access:https://hdl.handle.net/10356/146751

Internet

https://hdl.handle.net/10356/146751

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