High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

High-performance 1.06-μm InGaAs/GaAs double-quantum-well (DQW) asymmetric herero- structure semiconductor lasers have been designed, fabricated and characterized. The laser structure, grown by metal-organic chemical vapor deposition (MOCVD), mainly consists of compositionally graded p-Al Ga As upper...

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Bibliographic Details
Main Authors: Qiao, Zhongliang, Li, Xiang, Wang, Hong, Li, Te, Gao, Xin, Qu, Yi, Bo, Baoxue, Liu, Chongyang
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Asymmetric Hererostructure
Gallium Compounds
Online Access:https://hdl.handle.net/10356/147474

Internet

https://hdl.handle.net/10356/147474

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