High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers
High-performance 1.06-μm InGaAs/GaAs double-quantum-well (DQW) asymmetric herero- structure semiconductor lasers have been designed, fabricated and characterized. The laser structure, grown by metal-organic chemical vapor deposition (MOCVD), mainly consists of compositionally graded p-Al Ga As upper...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/147474 |