Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT sho...
| Main Authors: | , , , , |
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| מחברים אחרים: | |
| פורמט: | Journal Article |
| שפה: | English |
| יצא לאור: |
2021
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| נושאים: | |
| גישה מקוונת: | https://hdl.handle.net/10356/148696 |