Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT sho...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2021
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| Online Access: | https://hdl.handle.net/10356/148696 |
| _version_ | 1826118128285777920 |
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| author | Whiteside, Matthew Arulkumaran, Subramaniam Dikme, Yilmaz Sandupatla, Abhinay Ng, Geok Ing |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Whiteside, Matthew Arulkumaran, Subramaniam Dikme, Yilmaz Sandupatla, Abhinay Ng, Geok Ing |
| author_sort | Whiteside, Matthew |
| collection | NTU |
| description | AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT showed a maximum drain current (I Dmax) of 708 mA/mm at a gate bias of 4 V and a maximum extrinsic transconductance (g mmax) of 129 mS/mm. The 400 °C annealed MISHEMT exhibited an increase of 15% in g mmax, an order of magnitude reduction in reverse gate leakage and about a 3% suppression of drain current (I D) collapse. The increase of g mmax by post-gate annealing is consistent with the increase of 2DEG mobility. The suppression of I D collapse and the reduction of gate leakage current is attributed to the reduction of interface state density (5.0 × 10¹¹ cm⁻²eV⁻¹) between the AlN/GaN interface after post-gate annealing at 400 °C. This study demonstrates that LTE grown AlN is a promising alternate material as gate dielectric for GaN-based MISHEMT application. |
| first_indexed | 2024-10-01T04:38:40Z |
| format | Journal Article |
| id | ntu-10356/148696 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:38:40Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1486962021-05-31T08:27:51Z Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate Whiteside, Matthew Arulkumaran, Subramaniam Dikme, Yilmaz Sandupatla, Abhinay Ng, Geok Ing School of Electrical and Electronic Engineering Temasek Laboratories @ NTU Engineering::Electrical and electronic engineering LTE AlN AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT showed a maximum drain current (I Dmax) of 708 mA/mm at a gate bias of 4 V and a maximum extrinsic transconductance (g mmax) of 129 mS/mm. The 400 °C annealed MISHEMT exhibited an increase of 15% in g mmax, an order of magnitude reduction in reverse gate leakage and about a 3% suppression of drain current (I D) collapse. The increase of g mmax by post-gate annealing is consistent with the increase of 2DEG mobility. The suppression of I D collapse and the reduction of gate leakage current is attributed to the reduction of interface state density (5.0 × 10¹¹ cm⁻²eV⁻¹) between the AlN/GaN interface after post-gate annealing at 400 °C. This study demonstrates that LTE grown AlN is a promising alternate material as gate dielectric for GaN-based MISHEMT application. Published version 2021-05-31T08:27:51Z 2021-05-31T08:27:51Z 2020 Journal Article Whiteside, M., Arulkumaran, S., Dikme, Y., Sandupatla, A. & Ng, G. I. (2020). Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate. Electronics, 9(11). https://dx.doi.org/10.3390/electronics9111858 2079-9292 0000-0002-8957-2261 0000-0001-7299-8840 0000-0003-2928-0619 https://hdl.handle.net/10356/148696 10.3390/electronics9111858 2-s2.0-85096676015 11 9 en Electronics © 2020 The Author(s). Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering LTE AlN Whiteside, Matthew Arulkumaran, Subramaniam Dikme, Yilmaz Sandupatla, Abhinay Ng, Geok Ing Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate |
| title | Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate |
| title_full | Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate |
| title_fullStr | Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate |
| title_full_unstemmed | Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate |
| title_short | Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate |
| title_sort | demonstration of algan gan mishemt on si with low temperature epitaxy grown aln dielectric gate |
| topic | Engineering::Electrical and electronic engineering LTE AlN |
| url | https://hdl.handle.net/10356/148696 |
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