Formation of germanium (Ge) – based waveguides for infrared application
Germanium-tin (Ge0.9Sn0.1) alloy is one of the complementary metal-oxide-semiconductor (CMOS) compatible materials in group-IV of the periodic table. Due to the large lattice mismatch between GeSn and Silicon (Si) substrate, the defects will generate within the GeSn layer. Currently, thin GeSn acts...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
Nanyang Technological University
2021
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/150361 |