Formation of germanium (Ge) – based waveguides for infrared application
Germanium-tin (Ge0.9Sn0.1) alloy is one of the complementary metal-oxide-semiconductor (CMOS) compatible materials in group-IV of the periodic table. Due to the large lattice mismatch between GeSn and Silicon (Si) substrate, the defects will generate within the GeSn layer. Currently, thin GeSn acts...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/150361 |
| _version_ | 1826128085894823936 |
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| author | Zhong, Jian |
| author2 | Li King Ho Holden |
| author_facet | Li King Ho Holden Zhong, Jian |
| author_sort | Zhong, Jian |
| collection | NTU |
| description | Germanium-tin (Ge0.9Sn0.1) alloy is one of the complementary metal-oxide-semiconductor (CMOS) compatible materials in group-IV of the periodic table. Due to the large lattice mismatch between GeSn and Silicon (Si) substrate, the defects will generate within the GeSn layer. Currently, thin GeSn acts as a direct-band gap for near-mid infrared light source and photodetector. The report will show how to grow a high-quality single-crystalline GeSn (~1 μm) on germanium (Ge) buffer on Si substrate. The GeSn layer has low compression stress (-0.3%). A set of GeSn pedestal waveguide with a width of 1.25 μm has been fabricated. By measured the transmission power of GeSn at 3.74 μm, the results for propagation loss and bending loss are approximated to be 1.81 dB/cm and 0.19 dB/bend, respectively. Using infrared spectrometry, the GeSn waveguide is shown to have a transparency window to be longer than 25 μm. |
| first_indexed | 2024-10-01T07:19:09Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/150361 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:19:09Z |
| publishDate | 2021 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1503612021-05-27T08:21:58Z Formation of germanium (Ge) – based waveguides for infrared application Zhong, Jian Li King Ho Holden Tan, Chuan Seng School of Mechanical and Aerospace Engineering HoldenLi@ntu.edu.sg, TanCS@ntu.edu.sg Engineering::Mechanical engineering Germanium-tin (Ge0.9Sn0.1) alloy is one of the complementary metal-oxide-semiconductor (CMOS) compatible materials in group-IV of the periodic table. Due to the large lattice mismatch between GeSn and Silicon (Si) substrate, the defects will generate within the GeSn layer. Currently, thin GeSn acts as a direct-band gap for near-mid infrared light source and photodetector. The report will show how to grow a high-quality single-crystalline GeSn (~1 μm) on germanium (Ge) buffer on Si substrate. The GeSn layer has low compression stress (-0.3%). A set of GeSn pedestal waveguide with a width of 1.25 μm has been fabricated. By measured the transmission power of GeSn at 3.74 μm, the results for propagation loss and bending loss are approximated to be 1.81 dB/cm and 0.19 dB/bend, respectively. Using infrared spectrometry, the GeSn waveguide is shown to have a transparency window to be longer than 25 μm. Bachelor of Engineering (Mechanical Engineering) 2021-05-27T08:21:57Z 2021-05-27T08:21:57Z 2021 Final Year Project (FYP) Zhong, J. (2021). Formation of germanium (Ge) – based waveguides for infrared application. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/150361 https://hdl.handle.net/10356/150361 en P-B049 10.1109/JPHOT.2021.3059452 application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Mechanical engineering Zhong, Jian Formation of germanium (Ge) – based waveguides for infrared application |
| title | Formation of germanium (Ge) – based waveguides for infrared application |
| title_full | Formation of germanium (Ge) – based waveguides for infrared application |
| title_fullStr | Formation of germanium (Ge) – based waveguides for infrared application |
| title_full_unstemmed | Formation of germanium (Ge) – based waveguides for infrared application |
| title_short | Formation of germanium (Ge) – based waveguides for infrared application |
| title_sort | formation of germanium ge based waveguides for infrared application |
| topic | Engineering::Mechanical engineering |
| url | https://hdl.handle.net/10356/150361 |
| work_keys_str_mv | AT zhongjian formationofgermaniumgebasedwaveguidesforinfraredapplication |