Growth and fabrication of carbon-based three-dimensional heterostructure in through-silicon vias (TSVs) for 3D interconnects

Growth and fabrication of carbon-based three-dimensional heterostructure in through-silicon vias (TSVs) for 3D interconnects

Carbon nanomaterials such as graphene and carbon nanotubes (CNTs) have recently received much attention as potential materials proposed for integration in the future semiconductor technologies because of the advantageous properties particularly in thermal and electrical conductivities. Among them, t...

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Bibliographic Details
Main Authors: Zhu, Ye, Tan, Chong Wei, Chua, Shen Lin, Lim, Yu Dian, Tay, Beng Kang, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering
Carbon Nanomaterials
Through-Silicon Vias
Online Access:https://hdl.handle.net/10356/151178

Internet

https://hdl.handle.net/10356/151178

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