Enhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness
Ultrathin freestanding membranes with a pronounced metal–insulator transition (MIT) have huge potential for future flexible electronic applications as well as provide a unique aspect for the study of lattice–electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm...
| Principais autores: | , , , , , , , , , , , |
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| Outros Autores: | |
| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2021
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| Assuntos: | |
| Acesso em linha: | https://hdl.handle.net/10356/151393 |