Phase-controlled synthesis of monolayer ternary telluride with a random local displacement of tellurium atoms

Phase-controlled synthesis of monolayer ternary telluride with a random local displacement of tellurium atoms

Alloying 2D transition metal dichalcogenides has opened up new opportunities for bandgap engineering and phase control. Developing a simple and scalable synthetic route is therefore essential to explore the full potential of these alloys with tunable optical and electrical properties. Here, the dire...

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Bibliographic Details
Main Authors: Tang, Bijun, Zhou, Jiadong, Sun, Pingping, Wang, Xiaowei, Bai, Lichun, Dan, Jiadong, Yang, Jiefu, Zhou, Kun, Zhao, Xiaoxu, Pennycook, Stephen J., Liu, Zheng
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2021
Subjects:
Engineering::Materials
Atom Displacement
Phase Transitions
Online Access:https://hdl.handle.net/10356/151437

Internet

https://hdl.handle.net/10356/151437

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