Study of the effect of forward gate bias stress on the reliability of AlGaN/GaN HEMTs on SI
AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising capabilities for high frequency and high-power applications. As 5G technology and autonomous vehicles become more and more attractive, HEMTs will start to play an increasingly important role in the semiconductor industry. Whil...
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| 格式: | Thesis-Doctor of Philosophy |
| 语言: | English |
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Nanyang Technological University
2021
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| 在线阅读: | https://hdl.handle.net/10356/152654 |