High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection

High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection

Recently, high-performance GeSn photodiodes with external light illuminated on the device top surface have been demonstrated on various platforms. However, for image sensing systems with a focal-plane array (FPA), the front-illuminated sensors usually suffer from area limitations. Here, we report hi...

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Bibliographic Details
Main Authors: Wu, Shaoteng, Xu, Shengqiang, Zhou, Hao, Jin, Yuhao, Chen, Qimiao, Huang, Yi-Chiau, Zhang, Lin, Gong, Xiao, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering
Germanium-tin
Semiconductor
Silicon Photonics
Infrared Detectors
Black Silicon
Online Access:https://hdl.handle.net/10356/152766

Internet

https://hdl.handle.net/10356/152766

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