RF performance benchmarking of TSV integrated surface electrode ion trap for quantum computing

RF performance benchmarking of TSV integrated surface electrode ion trap for quantum computing

Surface electrode ion trap is highly promising for practical quantum computing due to its superior controllability on the trapped ions. With advanced microfabrication techniques, silicon has been developed as ion trap substrate for delicate surface electrodes design as well as monolithic electro-opt...

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Bibliographic Details
Main Authors: Zhao, Peng, Li, Hong Yu, Tao, Jing, Likforman, Jean-Pierre, Lim, Yu Dian, Seit, Wen Wei, Luca, Guidoni, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering
Surface Electrode Ion Trap
Finite Element Modeling
Online Access:https://hdl.handle.net/10356/153006

Internet

https://hdl.handle.net/10356/153006

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