2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure
Over the last couple of decades, GaN-based materials have emerged as promising candidates for high power and high-frequency devices. This can be attributed to their unique and attractive properties such as wide range of bandgap, high saturation velocity, spontaneous and piezoelectric polarization, a...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/153068 |